A laser-scanning calibre measuring and digital indicating prating photo-sensor gauging systems are introduced,which are used to measure the dimensions of bul-le
Defects in S doped Gap Single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temper
A new method to reduce the reflection-induced phase between the two ortho-gonal components of the linearly polarized light after the reflections is presented.T
The method,which used an electroluminescent device to implement the clipped Hopfield neural network,is presented in detail.The electrolumisescence devices are u
A new 128×128element PtSi Schottky barrier infrared image sen-sor with ITCCD readort structure and PtSi thin film optical cavity detector struc-ture has be
The complete phase-strain model for arbitrarily configured singe-mode optical fiber in an arbitrary three-demensional strain field is derived.It is includes al
The optical noninvasive diagnostic of characteristic of silicon semiconductor de-vices by using a InGaAsP/InP semiconductor laser as an optical probe is reporte
In this paper an optically-powered optical fiber sensor for pressure mea-surement is introduced.Differential strain gauges of diffused silicon are emploped as s