据美国专利3.829.391介绍:如果按照一般熟悉的方法生长单晶,是将粉末状的晶体材料,放入水冷却的容器内,将多个电极插入该容器内移动,电极之间电弧点火之后,产生一种熔体,它在冷却之后便形成单晶。遗憾的是这种方法如果不采取有效的措施,生长的单晶是浑浊的。材料纯度在99.99%时,尤其会出现这种情况。其原因 According to U.S. Patent No. 3,829,391, it is described that if a single crystal is grown according to a commonly known method, a powdered crystal material is placed in a water-cooled container, a plurality of electrodes are inserted into the container to move, and after the arc between the electrodes is ignited , Resulting in a melt that forms a single crystal after cooling. Unfortunately, this method does not take effective measures to the growth of single crystal is turbid. This is especially true when the material purity is 99.99%. The reason