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A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented.The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA,a I/Q merged quadrature mixer,a fifth-order Gm-C bi-quad Chebyshev LPF/VGA,a fast-settling frequency synthesizer with a poly-phase filter,a linear broadband up-conversion quadrature modulator,an active D2S converter and a variablegain power amplifier.The ESD protected transceiver is fabricated in Jazz Semiconductor’s 0.18-μm RF CMOS with an area of 6.1 mm~2 and draws a total current of 221 mAfrom 1.8-V supply.The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step,noise figures of 5.5-8.8 dB for three sub-bands,and an inband /out-band IIP_3 better than-4 dBm/+9 dBm.The transmitter achieves an output power ranging from-10.7 to-3 dBm with gain control,an output P_(1dB) better than-7.7 dBm,a sideband rejection about 32.4 dBc,and LO suppression of 31.1 dBc.The hopping time among sub-bands is less than 2.05 ns.
A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented. The transceiver is a direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I / Q merged quadrature mixer, a fifth-order Gm-C bi-quad Chebyshev LPF / VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variable gain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor’s 0.18-μm RF CMOS with an area of 6.1 mm ~ 2 and draws a total current of 221 mAfrom 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB / step , noise figures of 5.5-8.8 dB for three sub-bands, and an inband / out-band IIP_3 better than-4 dBm / + 9 dBm. The achieves achieves an output power ranging from-10.7 to-3 dBm with gain control, an output P_ (1dB) better than-7.7 dBm, a sideband rejection about 32.4 dBc, and LO suppr ession of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns.