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The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gain β decreases with increasing dose; increase of I - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT; β increases with Vbe or Ib, but decreases at Ib < 0.25 mA with 4, and congregates at higher dose; and a damage factor d(β) is much less at the same dose for SiGe HBT than for Si BJT. SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic -Ic0,Ib- Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed.
The DC characteristics of SiGe HBT irradiated at different electron doses have been studied in a comparison with those of Si BJT. Generally, Ib and Ib - Ib0 increase, Ic, Ic - Ic0 and its +/- transition Vbe as well as DC current gain β decreases with increasing dose; increase of I - Ib0 with increasing dose for Si BJT is much larger than that for SiGe HBT; β increases with Vbe or Ib, but decreases at Ib <0.25 mA with 4, and congregates at higher dose; and SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena for increase of Ic, Ic-Ic0, Ib-Ib0 and β at low dose have been found. Some electron traps have been measured. The mechanism of changes of characteristics is discussed.