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本文阐述了开管汽相外延(VPE)和液相外延(LPE)相结合生长 Hg_(1-x)Cd_xTe 外延膜的一种新方法。用该方法获得的优质外延膜,提高了晶貌质量,减少了失配位错,在衬底界面处得到一个具有很低表面复合速率的反射边界。用这种材料分别制得了工作在77K 及193K 下,截止波长为6.2μm 和5.3μm 的高性能光电二极管。用 VPE 和 LPE 的联合生长法在 CdTe 晶体获得的外延膜,在某些方面优于 LPE方法在 CdZnTe 替换衬底上生长的外延膜。
In this paper, a new method for epitaxial growth of Hg_ (1-x) Cd_xTe films by the combination of open tube vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) is described. The high quality epitaxial film obtained by this method improves the crystal quality and reduces misfit dislocations, resulting in a reflection boundary with a very low surface recombination rate at the substrate interface. With this material were made to work at 77K and 193K, cut-off wavelength of 6.2μm and 5.3μm high-performance photodiode. Epitaxial films obtained from CdTe crystals by the combined growth of VPE and LPE are in some ways superior to the epitaxial films grown on CdZnTe replacement substrates by the LPE method.