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用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe3d态密度存在,同时,在价带谱中2—10eV处有强度较大的S3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2·1eV;实验测得FeS2价带结构中导带宽度约为2·4eV,导带上方仍存在第二能隙,其宽度约为2·8eV.
The pure Fe thin films were prepared by magnetron sputtering, and the FeS2 was synthesized by sulfidation.The electronic structure of the thin films was studied by X-ray synchrotron radiation X-ray absorption spectroscopy and X-ray photoelectron spectroscopy.The results showed that the FeS2 thin films synthesized in the Fermi In the vicinity of the energy level there is a strong state density of Fe3d, and at the same time, there is a strong S3p state density at 2-10eV in the valence band spectrum. The 3d orbital of Fe is t2g and eg orbit, the difference between the two splitting levels calculated from the absorption spectrum of Fe in the experiment is 2 · 1eV. The experimentally measured conduction band width in the FeS2 valence band structure is about 2.4eV and there is still a second energy gap above the conduction band. Its width is about 2.8 eV.