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采用提拉法生长的Nd:LuVO4 晶体是一种适合二极管泵浦的新型激光晶体,运用化学腐蚀结合光学显微术和同步辐射白光X射线形貌术对Nd:LuVO4 晶体缺陷进行观察,结果表明:晶体的主要缺陷为位错和小角晶界。利用高分辨X射线衍射仪进一步验证了这一结果。并初步讨论了缺陷形成的原因。
The Nd: LuVO4 crystal grown by Czochralski method is a novel diode laser-pumped laser crystal. By chemical etching combined with optical microscopy and synchrotron radiation white light X-ray topography, Nd: LuVO4 crystal defects were observed. The main defects of the crystal are dislocations and small-angle grain boundaries. This result is further verified by high resolution X-ray diffractometry. The causes of defect formation were discussed preliminarily.