硅化钛薄膜由于电阻率低和其它一些良好特性,在VLSI的栅电极和互连线中显示出它潜在的优势。本文研究了用PECVD法制备硅化钛膜的卫艺。结果表明:所形成硅化钛膜的性质强烈地依赖于淀积工艺条件。还确定了典型工艺条件,并用俄歇电子能谱分析了硅化钛膜的组分。 Titanium silicide films have shown potential advantages in the VLSI gate electrodes and interconnects due to their low resistivity and some other good properties. This paper studies the use of PECVD titanium silicide film Wei art. The results show that the nature of the titanium silicide film formed strongly depends on the deposition process conditions. Typical process conditions were also determined and the composition of the titanium silicide film was analyzed by Auger electron spectroscopy.