论文部分内容阅读
日本科学技术厅无机材料研究所利用生长大的单晶体立方氮化硼(c-BN)的最新技术成果,成功地制造了世界上第一个能在650℃温度下稳定工作的p-n结型二极管。硅半导体目前广泛用作电子器件材料,但在200℃以上时失效。因此试图研究一种可用于极高温度环境,如外层空间和核反应堆的新型高温半导体材料。在这方面,刚度和可熔性等于金刚石的材料是值得考虑的,
The Institute of Inorganic Materials, Japan Science and Technology Agency succeeded in making the world’s first p-n junction diode that can operate stably at 650 ° C using the latest technological achievements of the growing monocrystalline cubic boron nitride (c-BN). Silicon semiconductors are currently widely used as electronic device materials, but fail above 200 ° C. Therefore, an attempt was made to study a new type of high temperature semiconductor material that can be used in extremely high temperature environments such as outer space and nuclear reactors. In this respect, the material of rigidity and fusibility equal to diamond is worth considering,