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用射频磁控溅射氧化锌掺铝陶瓷靶的方法在玻璃衬底上制备了ZnO∶Al薄膜。研究了衬底温度(Ts)、靶基距(Dt-s)对薄膜结构及光电性能的影响。实验结果显示:Ts在室温至300℃、Dt-s在35~60 mm范围内时,薄膜为六方相结构,并具有C轴取向,可见光范围平均透光率大于88%。Ts及Dt-s对薄膜电学性能的影响相似,随Ts升高或Dt-s增大,ZnO∶Al薄膜的电阻率先减小后增大,霍尔迁移率先增大后减小,载流子浓度逐渐减小。在Ts为150℃,Dt-s为40 mm时,可获得最低电阻率4.18×10-4Ω.cm的ZnO∶Al薄膜,其载流子浓度为8.13×1020cm-3、霍尔迁移率为18 cm2.V-.1s-1,可见光范围平均透过率为89%。
A ZnO: Al thin film was prepared on a glass substrate by RF magnetron sputtering of ZnO-Al-doped ceramic target. The effects of substrate temperature (Ts) and target distance (Dt-s) on the structure and optical properties of the films were investigated. The experimental results show that the film has a hexagonal phase structure with a C-axis orientation and an average light transmittance in the visible range of more than 88% at Ts ranging from room temperature to 300 ° C and a Dt-s in the range of 35-60 mm. The effects of Ts and Dt-s on the electrical properties of the films are similar. With the increase of Ts or the increase of Dt-s, the resistivity of ZnO: Al films decreases first and then increases, and the Hall mobility first increases and then decreases. The concentration gradually decreases. When Ts is 150 ℃ and Dt-s is 40 mm, the ZnO: Al thin film with the lowest resistivity of 4.18 × 10-4Ω.cm can be obtained. The carrier concentration is 8.13 × 1020cm-3 and the Hall mobility is 18 cm2.V-.1s-1, the average transmittance of the visible range of 89%.