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Ga是一种常见的靶核材料,具有低熔点高沸点的特性,而且是重要的裂变产物之一,其对于反应堆工程及ADS散裂靶等装置的设计具有重要的应用价值。因此,对Ga的评价中子核数据的基准检验非常重要。基于中国原子能科学研究院的高压倍加器,采用飞行时间法,测量了T(d,n)4He反应产生的14.8 MeV的单能脉冲中子与聚乙烯标准样品及Ga待测样品作用,在不同角度出射的中子泄漏谱,实验结果与CENDL-3.1和ENDF/B-Ⅶ数据库的MCNP模拟结果进行了比较。图1给出了两种不同尺寸的Ga样品分别在两个出射角度的泄漏中子谱与MCNP模拟的比较结果。
Ga is a common target material with low boiling point and high boiling point. It is also one of the most important fission products. It has important applications in the design of reactor engineering and ADS spallation target. Therefore, the evaluation of Ga benchmark data neutron test is very important. Based on the high voltage doubler of China Institute of Atomic Energy, the time-dependent method was used to measure the effect of 14.8 MeV single-energy pulsed neutron produced by T (d, n) 4He reaction on polyethylene standard samples and Ga samples. Angle neutron leakage spectra. The experimental results are compared with the MCNP simulation results of CENDL-3.1 and ENDF / B-VII databases. Figure 1 shows the comparison of the leakage neutron spectra and MCNP simulations for two Ga samples of different sizes at two exit angles respectively.