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氢化晶硅场效应晶体管(a—Si:HFET)的双极性特性,虽然早在1975年已经发现,但是直到十年后才引起人们注意.到目前为止,只发现两类a—Si:HFET具有双极性特性.其中一类是栅介质为石英,另一类的栅介质是高温热生长的SiO_2.并且,对这类器件的研究目前主要是在于模拟其输出特性.最近我校物理系颜一凡、何丰如同志研制出a—Si:HBiFET,它的栅介质是玻璃(~130μm),其化学成分见附表.它的源(S)和漏(D)区a—Si:H/Al接触是直接的,即a—Si:H/Al之问的中介层n~+a—Si 已被省掉.因此,它是迄今为止的工艺最
Bipolar characteristics of a-Si: HFETs, although discovered as early as 1975, did not attract attention until ten years ago and so far only two types of a-Si: HFETs have been found Has bipolar characteristics.One of them is the gate dielectric Quartz, the other is the gate dielectric of high temperature thermal growth of SiO 2, and the research of these devices is mainly to simulate the output characteristics of the recent Department of Physics Yan Yifan, He Fengru developed a-Si: HBiFET, its gate dielectric is glass (~ 130μm), the chemical composition of the table. Its source (S) and drain (D) The H / Al contact is direct, ie the interposer n ~ + a-Si of a-Si: H / Al has been omitted, so it is the most technically advanced