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用射频磁控共溅射方法在不同温度的单晶硅基片上生长薄膜,然后在800℃真空环境下对薄膜进行退火处理,成功获得了结晶状态良好的Zn2GeO4多晶薄膜.利用X射线衍射(XRD),X射线光电子能谱(XPS)和原子力显微镜(AFM)对薄膜进行了结构、成分和形貌分析,研究了基片温度对三者的影响.结果显示,当基片温度升高到400℃以上时,薄膜中的Zn2GeO4晶粒在(220)方向上显示出了明显的择优取向.当基片温度在500—600℃范围内,有利于GeO2结晶相的形成.XPS显示薄膜中存在着Zn2GeO4,GeO2,GeO,ZnO四种化合态.同时,随着基片温度的升高,晶粒尺寸增大且薄膜表面趋于平整.薄膜的光致发光在绿光带存在中心波长为530和550 nm两个峰,应该归因于主体材料ZnGeO中两个不同的Ge2+的发光中心.
The films were grown on a monocrystalline silicon substrate with different temperature by radio frequency magnetron co-sputtering method, and then annealed at 800 ℃ in vacuum environment, the Zn2GeO4 polycrystalline films with good crystalline state were obtained successfully.Using X-ray diffraction XRD, XPS and AFM were used to analyze the structure, composition and morphology of the films. The effects of substrate temperature on the three properties were studied. The results showed that when the substrate temperature increased to At temperatures above 400 ℃, the Zn2GeO4 grains in the films show a significant preferred orientation in the (220) direction, which is favorable for the formation of the GeO2 crystalline phase when the substrate temperature is in the range of 500-600 ° C. XPS shows the presence of With four states of Zn2GeO4, GeO2, GeO and ZnO.At the same time, as the temperature of the substrate increases, the grain size increases and the surface of the film tends to be flat.The photoluminescence of the film in the green band has a central wavelength of 530 And two peaks at 550 nm should be attributed to the luminescent centers of two different Ge2 + in the host material ZnGeO.