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计算了具有线性Ge 分布的SiGe 基区价带有效态密度和空穴浓度的分布,分析了基区内建电场的物理机制,分别采用Boltzm ann 统计和Ferm iDirac统计给出了内建电场分布的表达式并进行了计算,最后讨论了基区重掺杂对电场的影响
The distributions of effective density and hole concentration in valence band of SiGe with linear Ge distribution are calculated. The physical mechanism of the built-in electric field in base region is analyzed. The built-in electric field is given by Boltzmann statistics and Ferm i-Dirac statistics respectively. Distribution of the expression and calculated, and finally discussed the base of heavily doped on the electric field