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研究了一种用铍离子注入工艺制备Insb光电二极管的新方法。此法所得器件性能较标准扩散工艺所制备的并不逊色甚至还好。除注入工艺外,还正采用二氧化硅表面钝化取代早期的阳极氧化工艺。已经证实,二氧化硅可改进器件的稳定性与重复性。300K时表面态密度为10~(11)cm~(-2)eV~(-1),电阻率为2×10~(12)Ω-cm。很多二极管的性能数据表明:77K时器件零偏压阻抗和面积的乘积(R_0A)值达5×10~(5)Ω-cm,30K时大于1×10~(9)-cm~(2)。对Insb器件来说,这是目前报导的最高值。77K时测得的量子效率接近80％,波长为5.4μm,高密度列阵(1000元以上)的数据表明器件工作时有良好的一致性,较之镉扩散工艺所得R_0A的标准偏离值改进了50％。
A new method of preparing Insb photodiode using beryllium ion implantation process was studied. The device performance obtained by this method is not inferior to the standard diffusion process. In addition to the injection process, silicon dioxide surface passivation is also being used to replace the earlier anodization process. It has been demonstrated that silicon dioxide can improve device stability and repeatability. The surface state density is 10-11 cm -2 eV -1 at 300K, and the resistivity is 2 × 10-12 Ω-cm. The performance data of many diodes shows that the product of the zero bias impedance and area (R_0A) reaches 5 × 10 ~ (5) Ω-cm at 77K and is larger than 1 × 10 ~ (9) -cm ~ 2 at 30K, . For Insb devices, this is the highest reported so far. The measured quantum efficiency at 77K is close to 80% with a wavelength of 5.4μm. The data for the high-density array (above 1000) shows good agreement for the device during operation and is improved over the standard deviation of R_OA from the Cd diffusion process 50%.