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  5. ,Temperature-Dependent Transport Properties in Oxide p - n Junction above Room Temperature

,Temperature-Dependent Transport Properties in Oxide p - n Junction above Room Temperature

来源 :中国物理快报（英文版） | 被引量 : 0次 | 上传用户：jyzhenghb
【摘 要】
：
Oxide p - n junctions of p-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of
【作 者】
：
LIU Guo-Zhen JIN Kui-Juan HE Meng QIU Jie XING Jie LU Hui-Bin YANG Guo-Zhen 
【机 构】
：
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of S
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2008年6期
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Oxide p - n junctions of p-SrIn0.1Ti0.9O3/n-SrNb0.01Ti0.99O3 (SITO/SNTO) are fabricated by laser molecular beam epitaxy. The current-voltage characteristics of the SITO/SNTO p - n junction are investigated mainly in the temperature range of 300-400 K. The SITO//SNTO junction exhibited good rectifying behaviour over the whole temperature range. Our results indicate a possibility of application of oxide p - n junction in higher temperatures in future electronic devices.
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