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The molecular dynamics simulation is applied to investigate the influence of the incident ion energy and incidentangular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the manysurface roughness properties at both transient and final state conditions. The results show that the surface roughness of thedeposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low orhigh incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of theargon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.