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分别采用硫酸镉、硫脲、氨水溶液体系及硫酸锌、硫脲、氨水、联氨溶液体系,以化学水浴法(CBD)制备CdS和ZnS薄膜,研究水浴温度对薄膜沉积过程及性能的影响,分析不同水浴温度下沉积得到的CdS和ZnS薄膜性能的差异。试验表明,随着水浴温度的升高,薄膜的沉积速率增大,致密度变高,薄膜的禁带宽度更接近其理论值。当水浴温度大于70℃时,CdS薄膜的沉积速率远大于ZnS;随着水浴温度的升高,CdS晶粒逐渐变小而ZnS晶粒逐渐变大,CdS薄膜中S/Cd原子比逐渐下降,而ZnS薄膜中S/Zn原子比逐渐升高;ZnS薄膜能够透过更多短波高能光子且禁带宽度大于CdS,有利于提高太阳电池的效率。
CdS and ZnS thin films were prepared by chemical bath method (CBD) using cadmium sulfate, thiourea, ammonia solution and zinc sulfate, thiourea, ammonia and hydrazine solution respectively. The effects of water bath temperature on the deposition process and properties of the films were studied. The differences of properties of CdS and ZnS films deposited at different bath temperatures were analyzed. Experiments show that with the increase of water bath temperature, the film deposition rate increases, the density becomes higher, the forbidden band width of the film closer to its theoretical value. The deposition rate of CdS thin film is much larger than that of ZnS when the water bath temperature is higher than 70 ℃. With the increase of water bath temperature, the CdS grains become smaller and the ZnS grains become larger. The atomic ratio of S / Cd in CdS thin films decreases gradually, However, the atomic ratio of S / Zn in ZnS films increases gradually. The ZnS films can penetrate more short-wave and high-energy photons and the forbidden band width is larger than that of CdS, which is beneficial to improve the solar cell efficiency.