【摘 要】
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Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated.Both bipolar and unipolar stable resist
【机 构】
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School of Microelectronics and State Key Lab of ASIC & System,Fudan University,Shanghai 200433
论文部分内容阅读
Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated.Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current-voltage measurements.It is found that the RESET current is dependent on SET compliance current.The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.
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