本文从泊松方程出发,考虑了二氧化硅中电子俘获的影响,导出硅-二氧化硅界面的势垒高度.还得出了包含电子俘获作用的栅电流随时间变化的关系式.由此关系式及(?)表达式推得热电子衬底电流与栅电流之间的解析表达式,从而解释了在栅电流较大的情况下此两电流之间的非线性对数关系. Starting from the Poisson equation, the barrier height of the silicon-silicon dioxide interface is derived by taking into account the effect of electron trapping in the silicon dioxide, and the dependence of the gate current over time on the electron capture is derived. The relational expression and the (?) Expression deduce the analytic expression between the current of the hot electron substrate and the gate current, thereby explaining the non-linear logarithm relationship between these two currents in the case of a large gate current.