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用1 064nm皮秒脉冲激光辐照PV型线阵HgCdTe探测器,随着激光能量的增大,探测单元出现了不同程度的损伤,发现了致损单元的反常响应现象,致损单元响区蓝移,对波长为1 064nm的光响应灵敏度明显增强。结果表明:受损单元p型碲镉汞层出现汞析出现象后,受损光敏元碲镉汞材料组分和载流子浓度发生变化,pn结耗尽层宽度的变化导致pn结等效电阻变化,这是导致芯片损伤单元出现反常响应的主要因素。研究发现受损光敏元随着碲镉汞材料组分增大,碲镉汞材料能带禁带宽度增大,使探测器响区出现蓝移现象,这是损伤单元对波长为1 064nm激光响应更加灵敏的主要原因。
The PV linear HgCdTe detector was irradiated with 1 064 nm picosecond pulsed laser. As the laser energy increased, the detection unit appeared different degrees of damage, and the abnormal response of the damaged unit was found. The response to light with a wavelength of 1 064 nm is significantly enhanced. The results show that the component of mercury cadmium telluride (HgCdTe) and the carrier concentration change after the occurrence of mercury precipitation in the p-type HgCdTe layer in the damaged cell, and the change of depletion layer width of the pn junction leads to the equivalent resistance of pn junction Change, which is the main factor leading to the chip damage unit abnormal response. It is found that the damaged photosensitive element increases with the increase of the composition of HgCdTe, the energy bandgap of HgCdTe increases, and blue shift occurs in the detector zone, which is the effect of the damage unit on the laser wavelength of 1064nm The more sensitive the main reason.