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以高纯度的Ｂｉ２Ｏ３和ＭｏＯ３为原料，采用电化学方法制备了高质量紫红色Ｂｉ－Ｍｏ－Ｏ单晶，并研究了其输运性质．发现Ｂｉ－Ｍｏ－Ｏ单晶为半导体材料，其电阻随温度的变化可用公式Ｒ＝Ｒ０ｅｘｐ［Ｅａ／（２ｋＢＴ）］来描述；Ｉ－Ｖ特性的测量表明，Ｂｉ－Ｍｏ－Ｏ单晶中存在着一个阈值场，当外场低于阈值场时，材料呈现欧姆特性，高于阈值场时，单晶呈现出很强的非线性特征．
High purity Bi-Mo-O single crystal was prepared by electrochemical method using Bi2O3 and MoO3 as raw materials, and their transport properties were studied. It is found that the Bi-Mo-O single crystal is a semiconductor material whose resistance can be described by the formula R = R0exp [Ea / (2kBT)] with the change of temperature. The measurement of the I-V characteristic shows that the Bi- With a threshold field, when the external field is below the threshold field, the material exhibits an ohmic characteristic. Above the threshold field, the single crystal exhibits a strong nonlinear characteristic.