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薄膜厚度沿矩形靶长度方向分布的均匀度是衡量矩形平面磁控溅射装置镀膜质量的重要指标。为了分析气压和靶基板间距对该指标的影响,本文采用Monte Carlo方法,在假设靶材沿跑道均匀刻蚀的前提下,对靶材原子沉积过程进行了计算机仿真。模型假设靶材原子出射能量满足Thompson分布,出射角度以余弦定律处理;假设背景气体速度为麦克斯韦分布,并采用舍选法对各个速度分量进行了抽样;应用可变硬球模型对碰撞过程进行了处理。通过仿真发现,随着气压增大,尽管薄膜的均匀度越好,但是靶材原子到达基板的能量会降低;而靶与基板间距越大,薄膜的均匀度和靶材原子到达基板的能量都会降低。另外,通过对矩形靶端部磁场改进,可以削弱靶材的反常刻蚀现象,在提高靶材利用率的同时,可以有效提高薄膜均匀度。
The uniformity of the film thickness distribution along the length of the rectangular target is an important index to measure the coating quality of the rectangular planar magnetron sputtering device. In order to analyze the influence of air pressure and target substrate spacing on this index, Monte Carlo method is used to simulate the atomic deposition of target material under the premise of uniform etching along the runway. The model assumes that the exit energy of the target material satisfies the Thompson distribution and the outgoing angle is treated by the cosine law. Assuming that the background gas velocity is Maxwell’s distribution, the velocity components are sampled by the rounding method. The collision process is treated with a variable hard-sphere model . It is found through simulation that as the pressure increases, the energy of the target atoms reaches the substrate decreases even though the uniformity of the film is better. The larger the distance between the target and the substrate, the uniformity of the film and the energy of the target atoms reaching the substrate reduce. In addition, by improving the magnetic field at the end of the rectangular target, the phenomenon of abnormal etching of the target can be weakened, and the utilization of the target can be improved, and the film uniformity can be effectively improved.