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本文利用自行研制的一台超高真空化学气相沉积（ＵＨＶ／ＣＶＤ）系统，在７８０℃下进行了硅低温外延，取得了表面平整、缺陷密度低、界面质量良好、界面杂质分布陡峭的薄外延层
In this paper, an ultra-high vacuum chemical vapor deposition (UHV / CVD) system developed by ourselves was used to carry out the low-temperature epitaxial silicon at 780 ℃. The thin films with smooth surface, low defect density, good interfacial quality and steep interface impurity distribution were obtained. Floor