本文概述了薄膜场致发光器件的结构,在掺杂半导体(Zns:Mn)的两外表面活化层之间配置绝缘层(Y203)。与ZnS:Mn的一个表面层接触的是金属电极,而与ZnS:Mn另一个表面层接触的是透明电极。同时在玻璃基体的表层支柱上形成组合结构。场致发光现象开始发生在交变电压作用于横跨电极的界面层上。该结构的抗损性很大,其原因是紧靠着电极的ZnS:Mn活化层起着限制电流的作用,可以防止金属电 This article provides an overview of the structure of a thin-film electroluminescent device. An insulating layer (Y203) is placed between the two active layers of the doped semiconductor (Zns: Mn). A metal electrode is in contact with one surface layer of ZnS: Mn, and a transparent electrode is in contact with another surface layer of ZnS: Mn. While forming a composite structure on the surface pillars of the glass substrate. Electroluminescence begins to occur when an alternating voltage is applied across the interface layer of the electrode. The structure is highly resistant to damage due to the fact that the ZnS: Mn activation layer immediately adjacent to the electrode serves to limit the current and can prevent the metal