据从中科院上海微系统所获悉,该所信息功能材料国家重点实验室SOI课题组与超导课题组,采用化学气相淀积法,在锗衬底上直接制备出大面积、均匀的、高质量单层石墨烯。相关成果日前发表于《自然》杂志子刊《科学报告》。石墨烯在机械、电学、光学和化学方面的优异性能,使其具有巨大的应用前景。目前,化学气相沉积法是制备高质量、大面积石墨烯的最主要途径。但是,在石墨烯的生长过程中,金属基底是必不可少的催化剂,而随后的应用必须要 It is learned from the Shanghai Institute of Microsystem, Chinese Academy of Sciences, SOI Task Force and the superconductivity group of the State Key Laboratory of Information Functional Materials, the use of chemical vapor deposition method, directly on the germanium substrate prepared large area, uniform, high quality Single-layer graphene. Related results recently published in the “Nature” magazine sub-science report. Graphene excellent mechanical, electrical, optical and chemical properties, it has great application prospects. At present, chemical vapor deposition is the most important way to prepare high-quality, large-area graphene. However, during the growth of graphene, the metal substrate is an essential catalyst, and subsequent applications must