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用分子束外延方法制备了具有GaInAs组分渐变缓冲层和不具有GaInAs组分渐变缓冲层的Ga0.9In0.1As/GaAs结构的外延材料。利用高分辨率X射线衍射法(HRXRD)对制备的两种样品分别进行了测试分析。实验结果表明,GaInAs组分渐变缓冲层对外延生长在GaAs衬底上的Ga0.9In0.1As外延材料的晶体质量具有显著的改善作用,极大降低了由于外延层与衬底晶格不匹配所带来的影响。从X射线倒易空间衍射(RSM)二维图谱结果来看,具有GaInAs组分渐变缓冲层结构的样品,其Ga0.9In0.1As外延层与GaInAs组分渐变缓冲层接近完全弛豫,Ga0.9In0.1As外延层的应变降低,表面残留应力小于0.06%,同时,GaAs衬底与Ga0.9In0.1As外延层之间的偏移夹角明显变小。
Epitaxial materials of Ga0.9In0.1As / GaAs structure with GaInAs composition graded buffer layer and GaInAs non-graded buffer layer were prepared by molecular beam epitaxy. The prepared two samples were analyzed by HRXRD. The experimental results show that the graded buffer layer of GaInAs has a significant improvement on the crystal quality of Ga0.9In0.1As epitaxial growth epitaxially grown on GaAs substrates, greatly reducing the crystal lattice mismatch between the epitaxial layer and the substrate The impact of. From the result of X-ray reciprocal space diffraction (RSM), the Ga0.9In0.1As epitaxial layer with the graded buffer layer of GaInAs component is almost completely relaxed with the GaInAs buffer layer. The strain of the 9In0.1As epitaxial layer decreases and the surface residual stress is less than 0.06%. Meanwhile, the offset angle between the GaAs substrate and the Ga0.9In0.1As epitaxial layer is obviously smaller.