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研究了一种氢化非晶硅(a:H-Si)薄膜微晶化的激光控制工艺方法。在保持脉宽、激光功率和激光光斑大小一致的情况下,分别应用4、8、10、12、15Hz频率YAG激光对a:H-Si/晶体硅(c-Si)结构中的a:H-Si薄膜进行退火处理,探索了YAG激光脉冲频率对a:H-Si薄膜微晶化的影响。用X射线衍射仪(XRD)和原子力显微镜(AFM)对a:H-Si薄膜晶化后的物相结构和表面形貌进行了分析。实验结果表明,随着激光频率从4Hz增加到10Hz,a:H-Si薄膜晶化后的晶粒尺寸变大;随着激光频率从10Hz增加到15Hz,a:H-Si薄膜晶化后的晶粒尺寸逐步变小。脉冲频率为10Hz激光退火后的a:H-Si薄膜的晶化晶粒平均尺寸最大,约45nm。a:H-Si薄膜的表面电阻率随激光频率的增加总体呈下降趋势,晶化后晶粒尺寸最大的a:H-Si薄膜的表面电阻率最低。
A laser controlled process for the crystallization of hydrogenated amorphous silicon (a: H-Si) thin films was studied. While keeping the pulse width, the laser power and the laser spot size are the same, the a: H (a) -H -Si thin films annealed to explore the YAG laser pulse frequency on a: H-Si film crystallization. The phase structure and surface morphology of the a: H-Si thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The experimental results show that as the laser frequency increases from 4Hz to 10Hz, the crystallite size of the a: H-Si film becomes larger. As the laser frequency increases from 10Hz to 15Hz, a: The grain size gets smaller gradually. The average size of crystallized grains of a: H-Si film after laser annealing at the pulse frequency of 10Hz is the largest, about 45nm. a: The surface resistivity of H-Si film decreases with the increase of laser frequency. The a: H-Si film with the largest grain size after crystallization has the lowest surface resistivity.