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本发明公开了一种图像传感器结构及其制作方法,通过在CMOS图像传感器结构中环绕接触下电极设置导电屏蔽环,形成电场隔离,可利用施加在其上的电压限制光敏量子点薄膜中光生载流子的流动方向,将连续的薄膜分成不同的区域,从而降低了像素间串扰;同时,通过施加不同的屏蔽电压还可以改变分隔所成区域的大小,适应不同的应用场景,从而取得分辨率和灵敏度的平衡;本发明结构简单,制作时可不增加额外工艺步骤与成本,且抗串扰效果显著。
The present invention discloses an image sensor structure and a manufacturing method thereof. A conductive shielding ring is formed around a contact lower electrode in a CMOS image sensor structure to form electric field isolation. The voltage applied on the CMOS image sensor can limit the photogenerated load in the photosensitive quantum dot film Flow direction of the flow, the continuous film is divided into different regions, thereby reducing the crosstalk between pixels; the same time, by applying different shielding voltage can also change the size of the partition into the area to adapt to different application scenarios, so as to obtain the resolution And sensitivity; the invention has the advantages of simple structure, no additional process steps and costs when manufactured, and remarkable anti-crosstalk effect.