美国 IBM公司日前发表了使用铜布线与低介电体层间绝缘膜 (low- k膜 )、设计规格为 90 nm的 ASIC产品“Cu- 0 8”。该产品可以在单芯片上最大设计 72 0 0万个门电路 ,耗电量也较原有产品减少了 40 %。此次发表的 ASIC采用了以下 3种新技术。第一种是“Voltage Island“技术。设 IBM recently announced the use of copper wiring and low dielectric interlayer insulating film (low-k film), the design specification of 90 nm ASIC product ”Cu-0 8“. This product can design a maximum of 7.2 million gate circuits on a single chip and consume 40% less power than previous products. The published ASIC uses the following three new technologies. The first is ”Voltage Island" technology. Assume