将铜片完全浸润在一定浓度的Cu SO4溶液中,在其表面制备得到一层致密的Cu2O薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)研究了相同浸润时间,不同Cu SO4溶液浓度对所制备Cu2O薄膜晶体结构的影响。实验发现,浓度越高,薄膜的质量越优异,性能越好。浓度为10-1mol/L,浸润时间为12 h,薄膜的厚度可达2μm,晶粒尺寸最大可达2μm。 The copper film is completely infiltrated into a certain concentration of Cu SO4 solution, and a dense Cu2O film is prepared on the surface of the Cu film. The effects of the same wetting time and the concentration of CuSO4 solution on the crystal structure of Cu2O thin films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experiment found that the higher the concentration, the better the quality of the film, the better the performance. Concentration of 10-1mol / L, infiltration time of 12 h, the thickness of the film up to 2μm, the maximum grain size up to 2μm.