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采用发射波长为980nm的InGaAs/GaAs应变量子阱,在垂直腔面发射结构中共设计生长3组、每组3个量子阱,形成9个量子阱的周期性增益结构,并使每组均位于腔场极大处,以获得最好的增益匹配。为提高激光器的输出功率及获得较好的光束质量,采用大台面直径和由衬底面出射激光的结构。每个单元器件的P面台面直径为400~600μm,经湿氮气氛下40min的侧氧化后在有源区形成直径300~500μm的电流限制孔。而N面出光孔的直径仍为相应的400~600μm。在室温连续工作下器件的最大输出功率达到1.4W。随着注入电流的增大,观察到激光远场分布从空心圆环向中心单亮斑转化的过程。对不同温度下的激光输出特性进行了变温测试,结果表明通过DBR和有源区结构设计上较好的匹配,实现了室温下最低的激射阈值电流。
InGaAs / GaAs strained quantum wells with 980 nm emission wavelength, three groups of three quantum wells are designed and grown in the vertical cavity surface emitting structure, and each group has three quantum wells to form a periodic gain structure of nine quantum wells, and each group is located in a cavity Great place to get the best gain match. In order to improve the output power of the laser and obtain a better beam quality, a large mesa diameter and a structure for emitting laser light from the substrate surface are adopted. The diameter of the P-side mesa of each unit device is 400-600 μm, and a current limiting hole with a diameter of 300-500 μm is formed in the active region after 40 minutes of side oxidation in a wet nitrogen atmosphere. While the diameter of the N-face light exit hole is still corresponding to 400 ~ 600μm. Continuous operation at room temperature under the device’s maximum output power of 1.4W. With the increase of injection current, the process of laser far field distribution transforming from hollow ring to single bright spot was observed. The temperature characteristics of the laser output at different temperatures were tested. The results show that the lowest lasing threshold current at room temperature can be achieved by a better match between the DBR and active region structure design.