硅半导体器件、特别是大规模集成电路的可靠性,在很大程度上取决于硅片表面的加工质量。为了获得表面加工质量较好的硅片,除了改善加工方法外,还必须建立起一种较为灵敏的检测手段,才能比较真实地反映硅片表面的加工状态。目前,通常用于检查硅片表面加工质量的方法有:低倍显微镜直接检查法——这种方法只能检查出较为明显的机械损伤,而不能发现抛光时产生的细微缺陷;腐蚀法——所得结果与腐蚀液成份、腐蚀时间有关,并且,腐蚀时剥离去片子的表面层,因而无法检测较浅的表面层损伤。上述两种方法的 The reliability of silicon semiconductor devices, especially large scale integrated circuits, depends to a great extent on the processing quality of the wafer surface. In order to obtain better surface processing quality of silicon, in addition to improving the processing methods, but also must establish a more sensitive detection means, in order to more truly reflect the processing status of the silicon surface. At present, the methods commonly used for inspecting the surface quality of silicon wafers are as follows: low power microscope direct inspection method - this method can only detect obvious mechanical damage and can not find the minor defects generated during polishing; and the corrosion method - The results obtained are related to the composition of the etchant and the etching time, and the surface layer of the film is peeled off during the etching so that the damage of the superficial layer can not be detected. The above two methods