论文部分内容阅读
使用RF-PECVD法分别在基底温度为60℃、120℃和200℃的N型单晶锗表面制备了α-C:H膜,采用拉曼光谱、傅里叶变换红外吸收光谱和原子力显微镜等技术手段研究分析了α-C:H膜的价键组成及表面形貌,讨论了基底温度对α-C:H膜微结构及部分性能的影响。结果表明,在α-C:H膜沉积过程中,基底温度对膜层微观结构有较大影响,基底温度60℃时,膜层表面光滑、致密无石墨化现象。随着基底温度的升高,α-C:H膜中含H量和微晶石墨量逐渐增多,α-C:H膜层性能也逐步退化。
Α-C: H films were prepared by the RF-PECVD method on the surface of N-type single crystal germanium substrates with substrate temperatures of 60 ℃, 120 ℃ and 200 ℃, respectively. Raman spectra, Fourier transform infrared spectra and atomic force microscopy Technical means analysis of the α-C: H film valence bond composition and surface morphology, discussed the substrate temperature α-C: H film microstructure and part of the performance. The results show that the substrate temperature has a significant effect on the microstructure of the films during the deposition of α-C: H films. When the substrate temperature is 60 ℃, the film surface is smooth and densified without graphitization. With the increase of substrate temperature, the amount of H and microcrystalline graphite in α-C: H film gradually increased, and the properties of α-C: H film gradually deteriorated.