Van der Waals (vdW) heterostructures have attracted significant attention because of their widespread applications in nanoscale devices.In the present work,we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an exteal electric field by using the first-principles calculations based on density functional theory (DFT).The results demonstrate that the germanane/antimonene vdW heterostructure behaves as a metal in a[-1,-0.6]V/(A) range,while it is a direct semiconductor in a[-0.5,0.2]V/(A) range,and it is an indirect semiconductor in a[0.3,1.0]V/(A) range.Interestingly,the band alignment of germanane/antimonene vdW heterostructure appears as type-II feature both in a[-0.5,0.1]range and in a[0.3,1]V/(A) range,while it shows the type-Ⅰ character at 0.2 V/(A).In addition,we find that the germanane/antimonene vdW heterostructure is an indirect semiconductor both in an in-plane biaxial strain range of[-5％,-3％]and in an in-plane biaxial strain range of[3％,5％],while it exhibits a direct semiconductor character in an in-plane biaxial strain range of[-2％,2％].Furthermore,the band alignment of the germanane/antimonene vdW heterostructure changes from type-Ⅱ to type-Ⅰ at an in-plane biaxial strain of-3％.The adjustable electronic structure of this germanane/antimonene vdW heterostructure will pave the way for developing the nanoscale devices.