论文部分内容阅读
报道了分子束外延锗基中波碲镉汞薄膜材料以及320×256锗基中波碲镉汞红外焦平面探测器研究的初步结果。利用分子束外延技术基于3英寸锗衬底生长的中波碲镉汞薄膜材料,平均宏观缺陷密度低于200 cm-2,平均半峰宽优于90 arcsec,平均腐蚀坑密度低于2.9×106 cm-2;采用标准的二代平面工艺制备的320×256锗基中波碲镉汞红外焦平面探测器,平均峰值探测率达到3.8×1011cm·Hz1/2W-1,平均等效噪音温差优于17.3 mK,非均匀性优于6.5%,有效像元率高于99.7%。
The preliminary results of molecular beam epitaxy germanium-based medium wave HgCdTe film and 320 × 256 germanium-based MCW infrared focal plane detector were reported. The MWCNT thin film material based on 3-inch germanium substrate growth by molecular beam epitaxy shows that the average macro-defect density is less than 200 cm-2, the average full width at half maximum is better than 90 arcsec and the average corrosion pit density is less than 2.9 × 106 cm-2. The average peak detection rate of the 320 × 256 germanium-based MCW infrared focal plane detector with a standard second-generation planarization process is 3.8 × 1011cm · Hz1 / 2W-1 with an average equivalent noise temperature difference At 17.3 mK, the non-uniformity is better than 6.5% and the effective pixel rate is higher than 99.7%.