论文部分内容阅读
随着半导体材料的发展,近来对薄膜半导体材料的分析提出了新的要求。目前,国外己采用了各种分析方法,如离子探针质谱、放射化学分析、原子吸收光谱及化学光谱分析法。 我们结合任务要求及现有条件,开展了用化学光谱法分析硅外延层中的某些重金属杂质的工作。方法的要点是以氢氟酸与硝酸为腐蚀液,控制不同的时间,将硅的外延层逐层腐蚀下来,然后在密闭条件下加热,使基体挥散,以达到分离和浓缩杂质的目的,最后将浓缩物以光谱测定。 考虑到被测杂质大多数为电活性杂质(如Ag、Cu、Mn、Ni、Au、B等)环境污染较少,试剂空白也较常见元素低的原故,所以采用了化学光谱法。在国外主要是用空心阴极光源,由于这种方法操作复杂,且受现有条件的限制,我们采用了近来发展的“氩弧法”。该法的特点是对某些元素分析的绝对灵敏度高,且设备简单,操作方便。因此对薄层分析是有利的。根据我们测定的结果,各种元素测定的灵敏度为: Ag 1.0×10~(-11)g,Be 1.0×10~(-10)g;Mn 1.0×10~(-9)g; Cu 2.0×10~(-9)g; Au 2.0×10~(-9)g; Fe 3.0×10~(-9)g; Ni 1.0×10~(-8)g; B 5.0×10~(-8)g;Zn 2.3×10~(-8)g. 标准偏差2—50％。
With the development of semiconductor materials, the recent analysis of thin-film semiconductor materials puts forward new requirements. At present, foreign countries have adopted a variety of analytical methods, such as ion-exchange probe mass spectrometry, radiochemical analysis, atomic absorption spectrometry and chemical spectroscopy. We combine the task requirements and the existing conditions, carried out by chemical spectroscopy analysis of silicon epitaxial layer of some heavy metal impurities in the work. The main point of the method is that the hydrofluoric acid and nitric acid are used as the etching solution to control the different time, the silicon epitaxial layer is eroded layer by layer, and then heated in a sealed condition to volatilize the substrate so as to achieve the purpose of separating and concentrating the impurities, Finally, the concentrate was measured spectrographically. Taking into account the majority of impurities tested by the electroactive impurities (such as Ag, Cu, Mn, Ni, Au, B, etc.) less environmental pollution, reagent blank is also lower than the common elements of the reason, so the use of chemical spectroscopy. In the foreign countries, the hollow cathode light source is mainly used. Due to the complicated operation of this method and the restriction of the existing conditions, we have adopted the recently developed “argon arc method.” The law is characterized by the absolute sensitivity of some elements of the analysis, and the device is simple and easy to operate. It is therefore advantageous for thin layer analysis. Based on the results of our measurements, the sensitivities of the various elements measured are: Ag 1.0 × 10 ~ (-11) g, Be 1.0 × 10 ~ (-10) g; Mn 1.0 × 10 ~ (-9) g; Cu 2.0 × 10 ~ (-9) g; Au 2.0 × 10 -9 g; Fe 3.0 × 10 -9 g; Ni 1.0 × 10 -8 g; B 5.0 × 10 -8; g; Zn 2.3 × 10 ~ (-8) g. Standard deviation 2-50%.