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利用传输矩阵理论对无光学损耗和有光学损耗的分布布拉格反射镜(Distributed Bragg reflector,DBR)分别进行了结构分析与优化。在光场正入射条件下,对具有HL、HLH、LH及LHL结构的DBR内部光场分布情况进行了模拟分析和实验验证。结果表明:光场正入射到DBR后,在HL及HLH型DBR结构内部的光场分布最弱。当组成DBR的材料层消光系数为0.01时,HL及HLH型DBR内部产生的能流密度吸收量最小,为其他结构的10%左右,材料吸收引起的中心波长反射率降低仅为3.6%;而LH及LHL型DBR结构由于材料吸收而导致反射率降低29.2%。因此,采用高折射率材料层作为DBR结构的第一层有利于提高DBR反射率,降低光学吸收。最后,通过MOCVD外延生长了具有HL结构的吸收型Al0.12Ga0.88As/Al0.9Ga0.1As DBR结构,并对其反射特性进行了测试。
The transmission matrix theory is applied to the structural analysis and optimization of the distributed Bragg reflector (DBR) without optical loss and optical loss. Under the incident light field, the distribution of internal light field in DBR with HL, HLH, LH and LHL structures was simulated and verified. The results show that the light field distribution is the weakest in the HLR and HLH DBR structures when the light field is incident on the DBR. When the extinction coefficient of material layer composed of DBR is 0.01, the energy flux density absorbed by HL and HLH DBRs is the smallest, about 10% of other structures, and the reduction of central wavelength reflectivity caused by material absorption is only 3.6% The LHR and LHL DBR structures caused a 29.2% reduction in reflectivity due to material absorption. Therefore, using the high refractive index material layer as the first layer of the DBR structure is beneficial to improve the DBR reflectivity and reduce the optical absorption. Finally, an absorption type Al0.12Ga0.88As / Al0.9Ga0.1As DBR structure with HL structure was epitaxially grown by MOCVD, and its reflection characteristic was tested.