【摘 要】
：
基于扩散漂移方程,对背照式日盲紫外AlxGa1-xN异质结p-i-n光电二极管和可见盲GaN同质结吸收区和倍增区分离的雪崩光电二极管(SAM-APD)进行了建模,模拟分析了这两种探测器的光
【机 构】
：
重庆邮电大学光电学院,重庆光电研究所,
论文部分内容阅读
基于扩散漂移方程,对背照式日盲紫外AlxGa1-xN异质结p-i-n光电二极管和可见盲GaN同质结吸收区和倍增区分离的雪崩光电二极管(SAM-APD)进行了建模,模拟分析了这两种探测器的光电响应特性和电学参数,结果与实测数据和文献报道数据一致性较好。计算时还考虑了材料制备和器件工艺的实际情况,分析了有关参数对器件性能的影响,这些结果对于分析器件的工作机制以及提取某些感兴趣的参数都有较好的指导意义。
Based on the diffusion drift equation, the back-illuminated solar-blind UV-AlxGa1-xN heterojunction pin photodiode and the visible blind GaN homojunction absorption region and the amplified region avalanche photodiode (SAM-APD) were modeled and simulated The photoelectric response characteristics and electrical parameters of the two detectors are good, and the results are in good agreement with the measured data and the reported data. The calculation also takes into account the actual situation of material preparation and device technology, and analyzes the influence of the parameters on the performance of the device. These results are instructive for analyzing the working mechanism of the device and extracting some parameters of interest.
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