论文部分内容阅读
用等离子体浸没离子注入(PIII)对聚酰亚胺(PI)薄膜进行表面改性处理,研究在不同注入时间条件下聚酰亚胺薄膜表面电性能的转变,并通过X光电子能谱(XPS)分析其转变的机理。结果表明,经等离子体浸没离子注入处理后,聚酰亚胺薄膜的表面电阻与未处理的样品比较下降了约6个数量级,而且没有时效性问题;XPS分析结果表明处理后样品表面的C、N元素含量增加,O元素含量减少,说明样品表面受离子轰击发生了损伤,C=O、C-N键断裂,因此聚酰亚胺薄膜表面电阻下降主要是由薄膜表面发生碳化引起。
Polyimide (PI) films were surface modified with plasma immersion ion implantation (PIII) to investigate the electrical properties of the polyimide films at different implantation times. The surface properties of the polyimide films were characterized by X - ray photoelectron spectroscopy ) Analysis of the mechanism of its transformation. The results showed that the surface resistance of the polyimide film decreased by about 6 orders of magnitude compared with that of the untreated sample after plasma immersion ion implantation, and there was no problem of aging. The results of XPS analysis showed that the C, N element content increased, O element content decreased, indicating that the sample surface ion bombardment damage occurred, C = O, CN bond rupture, so the polyimide film surface resistance is mainly caused by the carbonization of the film surface.