随着准毫米波或毫米波脉码调制通讯方式的发展,要求相应地发展微波频段用的低噪声微波晶体管。为了实现现阶段的目的,应采取这样的方法,即以工作稳定的发射极接地方式使用作为主体的硅NPN平面型晶体管。关于微波晶体管的设计、制造技术,最近在各公司都有特定的方法发表,现在人们认为最有效的方法,基本上是由砷扩散形成发射极区、应用硼的热扩散或离子注入形成的基区,以及以铂为主体构成电极的方法。与此同时,还必须减小产生的寄生电阻、寄生电容及寄生电感成分,并且按照微波集成 With the development of quasi-millimeter-wave or millimeter-wave pulse-code modulation communication, it is required to develop a low-noise microwave transistor for microwave band accordingly. In order to achieve the purpose of the present stage, a method should be adopted that uses a silicon NPN planar transistor as a main body in a stable working emitter ground. As the design and manufacturing technology of microwave transistors have recently been published in various companies with specific methods, it is considered that the most effective method is basically to form an emitter region by diffusion of arsenic, and to use a base formed by thermal diffusion of boron or ion implantation Region, and a method of forming an electrode mainly made of platinum. At the same time, we must also reduce the resulting parasitic resistance, parasitic capacitance and parasitic inductance components, and in accordance with microwave integration