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A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx ) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785 × 10-6 A/cm2 at Vfb + 1V) and lower interface-state density (2.9 × 10 12 eV-1 ·cm-2 ) compared with other samples with N2-or NH3-plasma pretreatment. The influences of post-deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.
A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower The leakage current density (0.785 × 10-6 A / cm2 at Vfb + 1V) and lower interface-state density (2.9 × 1012 eV-1 · cm-2) than other samples with N2- or NH3- plasma pretreatment. influences of post-deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ° C exhibits better electrical properties than that annealed at 500 ° C, which is attributed to the suppression of native oxides, as confirmed by XPS analyzes.