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针对应用于单光子探测的单光子雪崩二极管建立了EDA电路模型,讨论了模型参数设置及仿真方法,利用此模型分别完成了像素级被动淬火集成电路、像素级主动淬火及快速恢复集成电路的设计仿真,并利用CSMC公司的0.5μmCMOS工艺进行流片制作。结果表明,建立的探测器模型与CMOS电路设计相互兼容,通过合适的电路设计和参数设置,采用以上集成淬灭电路的单光子探测器的最小“盲时”可分别达到100ns和4ns。
The single-photon avalanche diode used in single-photon detection is used to establish the EDA circuit model. The parameters of the model are set up and the simulation method is discussed. By using this model, the design of the integrated circuits for pixel-level passive quenching, pixel-level active quenching and rapid recovery Simulation, and the use of CSMC’s 0.5μm CMOS process for film production. The results show that the detector model is compatible with the design of CMOS circuit. With the proper circuit design and parameter setting, the minimum “blind time” of the single photon detector with the above integrated quenching circuit can reach 100ns and 4ns respectively.