一、前言 干法刻蚀技术在硅器件材料及其集成电路的制作工艺中早已得到了深入的研究和广泛的应用。Ⅲ—Ⅴ族化合物半导体材料的干法刻蚀工作则是在80年代初才开始得到重视。近年来,光纤通信技术的迅速发展,对以Ⅲ—Ⅴ族化合物为基材制作的光电器件、图形加工精度和剖面垂直度要求越来越高,传统的湿法腐蚀技术已难以满足各种微米级、亚微米级甚至毫微米级器件结构尺寸和发光器件端镜面制作技术的发展要求,从而进一步推动了Ⅲ—Ⅴ族化 I. Introduction Dry etching technology in silicon device materials and integrated circuit manufacturing process has long been in-depth research and extensive application. The dry etching of III-V compound semiconductor materials began to be emphasized in the early 1980s. In recent years, with the rapid development of optical fiber communication technology, the requirements of the electro-optical devices made of group III-V compound substrates, the precision of the pattern processing and the profile verticality are getting higher and higher. The traditional wet etching technology has been difficult to meet various micron Level, submicron or even nanometer-scale device structure size and light-emitting device end mirror production technology development requirements, thereby further promoting the Ⅲ-Ⅴ group