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采用射频磁控溅射法在单晶SrTiO_3(STO)衬底和硅(Si)衬底上制备出不同取向的SrRuO_3(SRO)薄膜,对薄膜的残余应力进行了分析,并研究了应力对不同取向SRO薄膜磁学性能与电输运特性的影响。根据X射线衍射(XRD)结果分析可知,Si基SRO薄膜为多晶单轴取向薄膜,且应力来源主要为热失配拉应力;STO基SRO薄膜为外延薄膜,其应力主要为热失配压应力和外延压应力;磁学性能测试表明,(001)取向SRO薄膜比(110)取向薄膜拥有更高的居里温度TC;压应力提高了(001)取向SRO薄膜的TC,却降低了(110)取向薄膜的TC。电阻性能测试表明,对于在同种类型衬底上沉积的SRO薄膜,(001)取向的薄膜的剩余表面电阻比(RRR)高于(110)取向的薄膜。另外,拉应力引起了薄膜微结构的无序度增加,弱化了表面电阻率的温度依赖性,提高了金属绝缘体转变温度(TMI)。
Different orientations of SrRuO_3 (SRO) thin films were prepared on single-crystal SrTiO_3 (STO) and silicon (Si) substrates by RF magnetron sputtering. Residual stress of the films was analyzed. Effect of Orientation SRO Thin Film on Magnetic Properties and Electrical Transport Properties. According to the results of X-ray diffraction (XRD) analysis, the Si-based SRO films are polycrystalline uniaxially oriented films, and the stress sources are mainly thermal mismatch tensile stress. The STO-based SRO films are epitaxial films and the stress is mainly thermal mismatch Stress and epitaxial compressive stress. Magnetic properties show that the (001) orientation SRO film has a higher Curie temperature TC than the (110) orientation film; compressive stress increases the TC of the (001) orientation SRO film, 110) oriented film TC. Resistance performance tests showed that for the SRO films deposited on the same type of substrate, the (001) oriented film had a higher residual surface resistance ratio (RRR) than the (110) oriented film. In addition, the tensile stress causes an increase in the disorder of the microstructure of the film, weakening the temperature dependency of the surface resistivity and increasing the metal insulator transition temperature (TMI).