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室温下用 3MeV的硅离子对聚苯乙烯 (PS)进行辐照 ,对辐照后的样品在室温至液氮温度范围的导电特性进行了测量 .结果表明 ,当辐照剂量在 1× 10 1 2 cm- 2 附近 ,PS的室温电阻发生突变 .随着温度的降低 ,PS电阻增大 ,在低辐照剂量下 ,电阻在 15 5K附近急剧增加 .对于高辐射剂量样品 ,在较高的温度下呈现热激活导电 ,在低温下电子通过隧穿传导 .分析认为 ,PS电阻随温度的变化是由于不同剂量辐照离子在聚合物中形成的对电子传导有贡献的导电中心密度不同 .通过拟合样品的渗流临界特性 ,分析了样品电阻随辐照剂量的变化
The polystyrene (PS) was irradiated with 3MeV silicon ions at room temperature, and the conductivity of the irradiated sample was measured at room temperature to liquid nitrogen temperature.The results show that when the irradiation dose is 1 × 10 1 At 2 cm-2, the resistance of PS changed abruptly at room temperature.With the decrease of temperature, the PS resistance increased, and at low irradiation dose, the resistance sharply increased near 15 5 K. For high radiation dose samples, Under the low temperature conduction of electrons through the tunneling analysis that the PS resistance changes with temperature is due to the different doses of irradiated ions in the polymer to form the conduction of electronic conduction density of different centers through the proposed According to the critical flow characteristics of the sample, the change of the sample resistance with the irradiation dose was analyzed