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本试验研究了影响位错密度的因素,对低位错热场进行了分析。讨论了晶向、直径和生长速率对位错密度的影响。通过静态与动态热场的选择与调整,降低晶体中热应力,已找到了低位错密度均匀分布的生长工艺条件。φ30～φ38毫米[111]晶体位错密度可控制在>5×10~2/厘米~2≤3×10~3/厘米~2的范围内,φ30～40毫米[100]晶体可控制在(1～2)×10~2/厘米~2,(>5×10~2/厘米~2)。初步试验了[110]和[115]晶向。低位错工艺与低氧工艺相结合,所得晶体的氧含量≤5×10~(17)原子/厘米~3。
In this study, the factors influencing the dislocation density were studied and the thermal field of low dislocation was analyzed. The effect of crystal orientation, diameter and growth rate on dislocation density was discussed. By selecting and adjusting the static and dynamic thermal fields to reduce the thermal stress in the crystal, the growth process conditions of uniform distribution of low dislocation density have been found. The crystal dislocation density of φ30 ~ φ38 mm [111] can be controlled within the range of> 5 × 10 ~ 2 / cm ~ 2≤3 × 10 ~ 3 / cm ~ 2 and the crystal of φ30 ~ 40 mm [100] 1 ~ 2) × 10 ~ 2 / cm ~ 2, (> 5 × 10 ~ 2 / cm ~ 2). Preliminary experimental [110] and [115] crystal orientation. Low dislocation process combined with low oxygen process, the resulting crystal oxygen content ≤ 5 × 10 ~ (17) atoms / cm ~ 3.