本文研究了微氮硅单晶在经历不同温度热处理时电阻率的变化,发现在700℃以上退火时,n型微氮硅单晶的电阻率首先上升,随后逐渐下降,保持一稳定值,而p型微氮硅单晶的电阻率变化则相反.实验证明微氮硅单晶在 7 00℃以上退火时,产生了热受主(T A),其浓度可达 2 ×10~(14)个/cm~3,它的产生是氧氮杂质共同作用的结果,可能是一种硅中氮氧复合物. In this paper, the changes of resistivity of micro-N-Si single crystal under different temperatures were investigated. It was found that the resistivity of n-type micro-N-Si crystal increased firstly and then decreased gradually to maintain a stable value when annealed above 700 ℃. The change of the resistivity of the p-type micro-nitrogen-silicon single crystal is the opposite, and it has been proved that the micro-nitrogen single-crystal annealed at above 700 ° C produces a thermal acceptor (TA) concentration of 2 × 10 ~ (14) / cm ~ 3, its production is the result of oxygen and nitrogen impurities together, may be a silicon oxygen-nitrogen complex.