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本文讨论了二维器件模拟程序的实用局限性,推出了用于一维工艺模拟器SUPREM-Ⅱ与二维器件模拟器MINIMOS之间的接口转换程序COSUM。描述了程序中采用的参数模型及其数值处理方法,并描述了程序的基本结构模块。 运用SUPREM-COSUM-MINIMOS模拟了64KDRAM电路中两种阈值电压的短沟道MOSFET,分析了它们的短沟道效应、衬底偏置效应等,并和实验结果作了比较。结果表明,COSUM程序的运用,使MINIMOS和SUPREM-Ⅱ有效地联系起来,从而能够参照实际制造工艺进行工艺模拟和较精确的二维器件模拟。因此说,COSUM程序的开发使MINIMOS具有良好的实用价值。
This article discusses the practical limitations of two-dimensional device simulation programs and introduces COSUM, an interface conversion program between the one-dimensional process simulator SUPREM-II and the two-dimensional device simulator MINIMOS. Describes the parameter model used in the program and its numerical processing methods, and describes the basic structure of the program modules. The SUPREM-COSUM-MINIMOS is used to simulate two kinds of short-channel MOSFETs with threshold voltage in 64KDRAM circuit. Their short-channel effect, substrate bias effect are analyzed and compared with the experimental results. The results show that the application of COSUM program effectively connects MINIMOS and SUPREM-Ⅱ, so that process simulation and accurate two-dimensional device simulation can be performed with reference to the actual manufacturing process. Therefore, the development of COSUM program makes MINIMOS have good practical value.