论文部分内容阅读
碳化硅(SiC)金属–氧化物–半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)具有低导通电阻及高击穿临界场强等特点,在高压开关器件领域有着较为广阔的应用及发展前景。但由于SiC/SiO_2具有较高的界面态密度,使得器件反型沟道电子迁移率过低,从而严重阻碍SiC器件的广泛应用。为有效地控制界面态,回顾了国内外对SiC/SiO_2界面态的第一性原理研究进展,分析界面态的形成机制,讨论近导带边界中高界面态的根本原因,为SiC器件工艺制备提供理论指导。
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the characteristics of low on-resistance and high breakdown critical field strength and are widely used in high-voltage switch devices The application and development prospects. However, due to the high interface state density of SiC / SiO 2, the reverse channel electron mobility of the device is too low, which seriously hinders the widespread application of SiC devices. In order to control the interfacial states effectively, the research progress of the first principles of the interfacial states of SiC / SiO_2 at home and abroad is reviewed. The formation mechanism of the interfacial states is also discussed. The fundamental reasons of the high interfacial states near the conduction band boundaries are discussed. Theoretical guidance.